Fabrication and characterization of InAs/GaSb strained layer superlattice infrared focal plane array detectors

We report the fabrication and characterization of high performance superlattice infrared photodetectors. The single-element detectors have 50% cutoff wavelengths of 5.2 μm and 8.0μm with related R ₀ A of 7.5×10 ⁴ O·cm ² and 110Ωcm ² , respectively at 77K. The focal plane arrays with cutoff wavelength of 5.2μm and format of 128×128, showed a noise equivalent differential temperature 33.4mK at 80K. Fabrication of long wavelength FPA is under way.