钝化
材料科学
腐蚀
铝
金属
硅
氧化物
单层
薄膜
氧化铝
残留物(化学)
化学工程
锡
冶金
图层(电子)
纳米技术
化学
有机化学
工程类
作者
Joyce C. Wei,Micky Huang
出处
期刊:ECS transactions
[Institute of Physics]
日期:2011-03-21
卷期号:34 (1): 343-348
被引量:1
摘要
A new Al post-etch residue remover with Al surface passivation function was developed. It is capable of removing polymer and inorganic residues with good compatibility to thin Aluminum, TiN, TaN, NiSi, and various silicon oxide films. A monolayer of passivation on the Al surface can be deposited in situ to prevent further oxidation and corrosion of the thin Al film. The passivation layer can be easily removed by a short plasma clean or baking to prepare the pristine Al surface for the successive processes. This solution is recommended for cleaning in FEOL high k/metal gate processes and contacts.
科研通智能强力驱动
Strongly Powered by AbleSci AI