Creation of p-n junction in Hg0.3Cd0.7Te

We have used local plastic deformation and electron irradiation to create p-n junctions in Hg0.3Cd0.7Te. The electron induced current mode of scanning electron microscopy was used to detect the local conversion from p type to n type. Control experiments with CdTe and independent results show that the migration of interstitial mercury and its reaction with an acceptor must be responsible for the observed conversion.