Planar 3 × 3 array of GaInAs/InP MQW surface optical modulators grown by gas-source MBE

Planar two-dimensional semiconductor arrays of optical modulators operating in the region of 1.55μm are reported for the first time. A process is described which uses MBE-grown GaInAs/InP MQW layers, and which gives a high yield of small, low-leakage optical modulators with an absorption change in each device of 3 dB for an applied bias of −30 V.