Microwave dielectric characteristics of SrLaGaO4 and SrNdGaO4 ceramics

SrLnGaO4 (Ln = La and Nd) ceramics with K2NiF4 structure were prepared by solid-state reaction approach, and the microwave dielectric properties and microstructures were characterized. The SrLaGaO4 and SrNdGaO4 ceramics with minor secondary phase, Sr3Ga2O6, were obtained by sintering at 1250–1350 °C for 3 h, and good microwave dielectric characteristics were achieved: the ceramics had (1) ɛ = 20.3, Q × f = 16,219 GHz, and τf = −33.5 ppm/°C for SrLaGaO4; and (2) ɛ = 21.4, Q × f = 16,650 GHz, and τf = 7.1 ppm/°C for SrNdGaO4.