材料科学
半最大全宽
缓冲器(光纤)
溅射沉积
图层(电子)
光电子学
基质(水族馆)
均方根
腔磁控管
表面粗糙度
溅射
薄膜
脉冲直流
表面光洁度
复合材料
纳米技术
电气工程
地质学
工程类
海洋学
作者
Hyoun Woo Kim,Nam Ho Kim
标识
DOI:10.1016/j.apsusc.2004.04.029
摘要
We have deposited the GaN films on Si(0 0 1) substrate using the ZnO buffer layers at room temperature by the radio frequency (rf) magnetron sputtering method. The ZnO buffer layer thickness affected the structural properties of GaN films. With a sufficiently thick ZnO layer, we have obtained a c-axis-oriented GaN/ZnO thin film on Si with the XRD full-width at half-maximum (FWHM) of 0.22° and root-mean-square (RMS) surface roughness of about 22 Å.
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