Can TDDB continue to serve as reliability test method for advance gate dielectric?

Advanced gate dielectrics for MOSFET, be it ultra thin SiO/sub 2/ or high-k materials are destined for deep submicron technology that is moving increasingly toward 1 voltage or below operating voltage. In this paper, we show that the well-established method of reliability evaluation and lifetime projection for gate dielectric, namely time dependent dielectric breakdown (TDDB), will no long be a suitable method for reliability evaluation, for gate dielectrics in low voltage operation.