Unraveling Synergistic Dual-Element Doping Mechanisms in Solid-State Synthesis via Atomic Layer Deposition-Enabled Model Systems

O, we reveal a unique synergistic effect between Al and W: whereas W alone tends to segregate at the particle surface, the presence of Al facilitates its lattice incorporation. Notably, lattice-incorporated W significantly enhances rate capability and high-voltage cycling stability, attributed to robust W-O bonding within the host lattice. This ALD-based model system provides a versatile and broadly applicable platform for elucidating fundamental doping mechanisms in solid-state synthesis, offering critical insights into complex multidopant interactions.