钙钛矿(结构)
发光二极管
电致发光
材料科学
光电子学
纳米晶
二极管
量子效率
结晶
纳米技术
化学工程
化学
结晶学
工程类
图层(电子)
作者
Haoran Wang,Xiwen Gong,Dewei Zhao,Yong‐Biao Zhao,Sheng Wang,Jianfeng Zhang,Lingmei Kong,Bin Wei,Rafael Quintero‐Bermudez,Oleksandr Voznyy,Yuequn Shang,Zhijun Ning,Yanfa Yan,Edward H. Sargent,Xuyong Yang
出处
期刊:Joule
[Elsevier]
日期:2020-07-29
卷期号:4 (9): 1977-1987
被引量:166
标识
DOI:10.1016/j.joule.2020.07.002
摘要
With rapid progress in perovskite light-emitting diodes (PeLEDs), the electroluminescence performance of large-area is of increasing interest. We investigated why large-area performance lags behind that achieved in laboratory-scale devices and found that defects in perovskite films—emerging from thermal convection during solvent evaporation, as well as electronic traps formed during perovskite crystallization—are chief causes. Here, we report a molecular modification strategy that simultaneously eliminates pinholes in perovskite layers by controlling the dynamics of film formation and that passivates defects in perovskites by incorporating Br species, thereby preventing shorts and non-radiative recombination. The molecular modifier 1,3,5-tris (bromomethyl) benzene (TBB) also modulates the electronic structure of injection or transport materials to achieve improved charge injection and balanced charge transport. As a result, we demonstrate 20 mm × 20 mm green perovskite nanocrystal LEDs that achieve an external quantum efficiency (EQE) of over 16%, a record for large-area PeLEDs.
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