Distorted octahedral site occupation-induced high-efficiency broadband near-infrared emission in LiScGe2O6:Cr3+ phosphor

Benefiting from a proposed distorted octahedral site occupation strategy using Cr 3+ , we demonstraed a high-efficiency broadband NIR-emitting phosphor LiScGe 2 O 6 :Cr 3+ peaking at 886 nm with a full width at half maximum of 160 nm and a record external quantum efficiency of ∼40%.