An LCD addressed by a-Si:H TFTs with peripheral poly-Si TFT circuits

Poly-Si TFTs of an inverted staggered structure are fabricated by peripheral laser annealing of plasma CVD a-Si:H films on SiN gate insulator. The side contact structure improves the TFT characteristics resulting in mobility of 20 cm/sup 2Vs and on/off ratio of 10/sup 6/. The fabrication process, carried out below 300/spl deg/C, is compatible with conventional a-Si TFT processes. The LCD using a switch matrix of poly Si TFTs has good performance and reduces the number of driver ICs by half.< >