材料科学
进程窗口
光电子学
薄脆饼
过程(计算)
抵抗
蚀刻(微加工)
图层(电子)
基质(水族馆)
平版印刷术
生产线后端
原子层沉积
光刻
制作
涂层
光刻胶
等离子体刻蚀
作者
Rui Chen,Granger Lobb,Aleksandra Clancy,Bradley Morgenfeld,Shyam Pal
摘要
Abstract Multiple patterning employing etch shrink extends the scaling of hardmask open CD (HCD) to sub-50nm regime. A plasma-assisted shrink technique is primarily used in the back-end-of-line (BEOL) however it faces major challenges such as the line end shortening (LES) and large critical dimension iso-dense bias (IDB). In order to mitigate these two problems we apply an atomic layer deposition (ALD) spacer shrink process at 10nm metal interconnect layer with sub-20nm minimum half-pitch. As a result we observed 8nm LES improvement in tip-to-tip (T2T) two-dimensional (2D) structures, and 5nm IDB reduction in one-dimensional (1D) structures. These improvements suggest that the ALD spacer shrink can contribute to more precise CD control in multiple patterning.
科研通智能强力驱动
Strongly Powered by AbleSci AI