Enhanced Endurance and Stability of FDSOI Ferroelectric FETs at Cryogenic Temperatures for Advanced Memory Applications

In this work, we have systematically characterized the ferroelectric (FE) and memory properties in the fully depleted silicon-on-insulator (FDSOI) FE field-effect transistor (FeFET) across a temperature range of 300–5 K. At a deep cryogenic temperature of 5 K, the endurance of multipolarization states in Hf0.5Zr0.5O2 (HZO) gate-stack exhibits a significant improvement compared to that at 300 K. Especially for states of partial switching polarization under low voltage, it is expected to achieve endurance immunity. This can be attributed to that oxygen vacancies are more difficult to redistribute at cryogenic temperature. Furthermore, compared to 300 K, the performance of multilevel cell FDSOI FeFET at 5 K demonstrates higher stability, providing a promising solution for cryogenic memory and computing systems with low power and high stability.