发光二极管
钙钛矿(结构)
材料科学
二极管
光电子学
钝化
异质结
分子
电压
限制
量子点
纳米技术
波长
航程(航空)
作者
Yaxin Wang,Bingbing Guo,Yaxiao Lian,Zhixiang Ren,Yichen Yang,Shiyu Xing,Gan Zhang,Runchen Lai,Shi‐Yuan Zhang,Chen Zou,Baodan Zhao,Dawei Di
出处
期刊:ACS Nano
[American Chemical Society]
日期:2025-12-15
卷期号:19 (51): 42729-42736
标识
DOI:10.1021/acsnano.5c10196
摘要
Perovskite light-emitting diodes (PeLEDs) have made significant advancements over the past decade. However, despite their rapid improvements in external quantum efficiencies (EQEs), progress in energy conversion efficiencies (ECEs) remains slow, limiting their applications in areas such as smart wearables and sensing, where low power and low voltage operation of devices is of critical importance. The normally unsatisfactory ECEs of PeLEDs could be attributed to the low EQEs resulting from the dominant trap-assisted nonradiative recombination at low current densities and the high operating voltages required for sufficient photon output. Here, we demonstrate FA1-xCsxPbI3 perovskite LEDs with simultaneously enhanced EQEs and ECEs through the introduction of a β-alaninamide hydrochloride (BAH) molecular passivator. These molecules effectively passivate defects and promote the formation of the more desirable α-phase perovskites, resulting in suppressed nonradiative recombination losses and reduced operating voltages. The resultant near-infrared (795 nm) PeLEDs exhibit peak EQEs of ∼23.6% at 2 mA cm-2 and peak ECEs of ∼24.6% at 0.79 mA cm-2. Owing to the broad processing window of our method, excellent device performance over an extensive wavelength range (723-795 nm) is achieved. These findings contribute to the development of energy-saving and scalable perovskite LEDs.
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