光电探测器
异质结
响应度
整改
光电子学
范德瓦尔斯力
材料科学
比探测率
宽带
暗电流
各向异性
偏压
探测器
电压
光电效应
电场
光学
纳米尺度
光伏系统
作者
Peng Huang,Leyi Han,Zhengyu Xu,Xiaofei Ma,Mengyao Chen,Ziyi Fan,Cheng Wang,Lin Wu,Liang Li,Wenshuai Gao,Mingliang Tian
标识
DOI:10.1021/acsaelm.5c01645
摘要
Two-dimensional van der Waals heterojunctions have attracted considerable attention in photodetector research owing to their excellent material compatibility and superior optoelectronic performance. Heterojunctions constructed from 2D materials, with their nanoscale thickness and intrinsic van der Waals interfacial contact characteristics, exhibit unique photoresponse behaviors. In this work, we successfully fabricate a self-powered photodetector based on a ReS2/Nb3Cl8 vdWH. The device demonstrates a low dark current (∼10–13 A) and achieves a rectification ratio of 1.2 × 103 under zero bias. Owing to the built-in electric field at the heterojunction interface, the device manifests photovoltaic characteristics, yielding an open-circuit voltage of 0.078 V and a short-circuit current of 0.18 nA. This detector achieves a high responsivity of 69.5 mA/W, an excellent specific detectivity of 1.67 × 1012 Jones, a switching ratio of 2.58 × 103, an anisotropy ratio of up to 1.85, and a fast response time of 88/102 μs at zero bias voltage. Furthermore, the device exhibits outstanding self-powered photoresponse characteristics across a broad spectral range from 365 to 940 nm. These results effectively demonstrate the significant application value of the ReS2/Nb3Cl8 vdWH for broadband self-powered photodetection.
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