Exploring the Application of Gold‐Assisted Exfoliation in Large‐scale Integration of n‐Type and p‐Type 2D‐FETs

Abstract 2D materials, with their atomic‐scale thickness and exceptional electronic properties, hold immense potential for advancing transistor technologies beyond silicon's limitations. While large‐area growth techniques like metal‐organic chemical vapor deposition (MOCVD) enable scalable device fabrication, achieving monolayers with high crystallinity remains challenging. Recently, gold‐assisted mechanical exfoliation has emerged as a promising alternative, offering large‐area monolayers isolated directly from bulk crystals. In this work, gold‐assisted mechanical exfoliation is utilized to obtain large‐area monolayers of MoS 2 and WSe 2 and fabricate over 100 NMOS and 100 PMOS FETs – the largest statistical dataset of FETs created with gold‐assisted exfoliation and the first to include p‐FET performance analysis. Leveraging these devices, the performance of CMOS inverter circuits is constructed and evaluated. This study establishes gold‐assisted exfoliation as a reliable technique for obtaining large‐area 2D materials and highlights the need to optimize bulk crystal growth processes for large‐area monolayer production.