3D Vertical Self-Rectifying Memristor Arrays With Split-Cell Structure, Large Nonlinearity (>104) and fJ-Level Switching Energy

High-performance self-rectifying memristor (SRM)-based three-dimensional (3D) architecture with high integration density is an ideal hardware platform for 3D in-memory computing (IMC). In this work, we fabricated Pt/HfO ₂ /TaO _x /Ta SRM-based 2-layer 8 × 16 vertical stacked 3D memristor arrays with split-cell structure. The specially designed structure of the 3D memristor array doubles the integration density of the traditional vertical-stacked resistive random access memory (V-RRAM) and further reduces the bit cost. The SRMs in the 3D memristor arrays show high uniformity, >10 ⁴ nonlinearity, and >10 ⁴ rectification ratio. The SRMs can be fast operated repeatedly at Set (4.5 V/200 ns) and Reset (-2 V/100 ns) pulses for more than 10 ⁵ cycles resulting in the <30 fJ switching energy. Excellent device-to-device uniformity verifies the high reliability and stability of our fabrication processes. Based on the measured data, we evaluate that, on the premise of 10% read margin, the maximum array size can reach 1.56 Gbit. Our work advances the development of 3D integration and even 3D IMC.