双极结晶体管
晶体管
可扩展性
联轴节(管道)
浅沟隔离
电子工程
共发射极
计算机科学
沟槽
材料科学
异质发射极双极晶体管
光电子学
电气工程
工程类
机械工程
图层(电子)
电压
纳米技术
数据库
作者
Aakashdeep Gupta,K Nidhin,Suresh Balanethiram,Shon Yadav,Sébastien Frégonèse,Thomas Zimmer,Anjan Chakravorty
标识
DOI:10.1109/ted.2022.3215801
摘要
We present a compact modeling framework to optimize finger spacing for improving the thermal stability in multi-finger bipolar transistors with shallow-trench isolation. First, we present an accurate physics-based model for total junction temperature in all the fingers of a transistor. Other than validating the model with 3D TCAD simulations and measured data, we demonstrate its efficacy to achieve finger spacing optimization with the aid of an iterative algorithm. Since the proposed technique is scalable from the viewpoint of the number of fingers within a transistor and their geometries, the proposed framework is found to work seamlessly for various emitter finger numbers.
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