单层
二硫化钼
离解(化学)
分子
材料科学
空位缺陷
密度泛函理论
氢
兴奋剂
化学物理
从头算
吸附
Atom(片上系统)
结晶学
计算化学
物理化学
纳米技术
化学
有机化学
嵌入式系统
冶金
光电子学
计算机科学
作者
Y. Irusta,Guillermo Morón-Navarrete,César González
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2024-05-28
卷期号:35 (35): 355703-355703
被引量:4
标识
DOI:10.1088/1361-6528/ad50dd
摘要
Abstract Motivated by the recent interest in the hydrogen energy, we have carried out a complete study of the catalytic activity of a defective molybdenum disulfide monolayer (MoS 2 ) by means of density functional theory (DFT) calculations. The MoS 2 monolayer is characterized by a nonreactive basal plane. In principle, its catalytic activity is concentrated at the edges, but an alternative way to increase such activity is obtained by creating active sites where the molecules can dissociate. These defects can be easily produced experimentally by different techniques. In our study, we have performed an atomic, energetic and electronic analysis of a hydrogen molecule adsorbed on a MoS 2 monolayer. In a first step, we have found that the H 2 molecule remains physisorbed over both doped-free and Nb-doped MoS 2 monolayers, showing that the Nb atom does not increase the poor reactivity of the clean MoS 2 layer. Interestingly, our energetic results suggest that the vacancies will prefer to be formed close to the Nb atoms in the doped monolayer, but the small energy difference would allow the formation in non-doped like sites. Theoretically, we found out the conditions for the molecular dissociation on a S vacancy. In both cases, with and without Nb, the molecule should rotate from the original perpendicular position to an almost parallel orientation jumping an energetic barrier. After that, the atoms are separated binding to the Mo atoms around the missing S atom. Our ab initio molecular dynamics simulations show that for low pressure conditions (using one single molecule in the system) the H 2 prefers to desorb from the vacancy, while for larger pressures (when additional H 2 molecules are added to the system) the molecule is finally dissociated on the vacancy. Our long simulations confirm the great stability of the structure with the two H atoms binding to the Mo atoms close to the vacancy. Finally, the inclusion of a third (or a fourth) H atom in the vacancy leads to the formation and desorption of a H 2 molecule, leaving one (or two) atoms in the vacancy.
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