Back‐End‐of‐Line SiC‐Based Memristor for Resistive Memory and Artificial Synapse (Adv. Electron. Mater. 9/2022)

SiC Based Memristor for Resistive Memory and Artificial Synapse In article number 2200312, Ruomeng Huang and co-workers develop a back-end-of-line material SiC based two-terminal memristor as artificial synapse to faithfully emulate several vital synaptic functions of human brain. This work presents an important advance in SiC based memristor and its application in both memory and neuromorphic computing.