Single and periodically Si -doped InP grown by LP-MOVPE

Single and periodically Si -doped InP layers were grown by LP-MOVPE at . A full width at half maximum of 32 Å was obtained for the net charge concentration profile for a sample with a peak net charge concentration of . Numerical simulations showed that the impurities are localized over less than three InP monolayers. No dopant diffusion or segregation was observed. The periodic structures, grown with barriers varying from 100 to 300 Å, all had nearly the same carrier sheet concentration per dopant layer and impurity localization characteristics.