Preparation of CuInSe_2 Thin Films by Selenization of Cu-In Alloys

Thin films of copper indium selenizate (CuInSe2) are grown on Mo substrates by selenization of Cu-In precursors are prepared by electrodeposition. Firstly the electrodeposition and of Cu-In alloy is studied by the methods of cyclic voltammetry. The results show that the optimum potentials for electrodeposition is about-0.75V(vs SCE),it is observed that the Cu/In atomic ratio is 1.1. Cu-In thin films are prepared at different deposition potentials. The influences of composition and ctructure on the propenties are investigated. After selenization,stoichiometric CIS films with a single chalcopyrite phase are synthesized from Cu-In precursors.