Research of CCl_2F_2 plasma dry etching InSb-In thin film

The plasma density in the plasma etching experimental application are diagnosed by a Langmuir single probe and the effects on CCl2F2 plasma etching InSbIn thin film is studied.The experimental results show that the plasma etching experimental device could produce high density plasma.The number of the plasma density was 6.717?0×1010cm-3 on the surface of the sample.The CCl2F2 plasma could etch InSbIn thin film effectively.