Model of Cracked Solar Cell Metallization Leading to Permanent Module Power Loss
硅
材料科学
弯曲
复合材料
光电子学
作者
Jörg Käsewieter,Felix Haase,Marc Köntges
出处
期刊:IEEE Journal of Photovoltaics [Institute of Electrical and Electronics Engineers] 日期:2015-10-26卷期号:6 (1): 28-33被引量:30
标识
DOI:10.1109/jphotov.2015.2487829
摘要
We measure the progression of resistances of cell cracks in laminated multicrystalline silicon solar cells and study the impact of the crack width and the number of loading cycles. The resistance of the front fingers increases by a factor larger than 1000 during loading. The resistance increase always recovers to its initial value of 0.2 Ω under unloaded conditions. This holds for up to 10 5 bending cycles. In contrast, the rear resistance of the aluminum paste shows a fatigue behavior. During the first 100 bending cycles, the unloaded rear resistance increases continuously from 0.03 to 2 Ω. Afterwards, it starts to scatter in the range of 0.1 Ω to more than 4000 Ω after 10 3 cycles. The rear resistance of a sample without rear encapsulation degrades 24 000 times slower compared with an encapsulated sample. After 10 5 cycles, the rear resistance is still less than 0.2 Ω. We introduce a model for the development of the crack resistance, which qualitatively explains the measured resistance values.