Improved Conversion Efficiency of Textured InGaN Solar Cells With Interdigitated Imbedded Electrodes

Textured n-GaN/i-InGaN/p-GaN solar cells with interdigitated imbedded electrodes (IIEs) eliminating the electrode-shading loss have been investigated. In the absence of the electrode-shading effect, the optimized textured solar cell exhibits a conversion efficiency of 1.03%, which is 78% and 47% higher than those of the conventional structure and the structure with mirror coated on silicon substrate with electrode shading, respectively. The short-circuit current density of this textured HE device is about 0.65 mA/cm ² , which is 71% and 44% higher than those of the two compared structures, respectively.