Enabling Plasma Etch Solution for GaN Technology

High breakdown voltages, high electron mobility and saturation velocity of gallium nitride (GaN) make it suitable for high frequency, high voltage, high temperature and high efficiency applications. Plasma dry etch is one of the key device manufacturing processes which played an important role in advanced GaN technology development. Partnered with several GaN device research institutes, IDMs and foundries, Leuven Instruments has been continuously accelerating tool hardware/function design cycle to fulfill the device manufacturing requirement, improving tool robustness, enhancing tool process capabilities. We’ve successfully developed a full GaN dry etching solutions from well-tuned anisotropic profile and smooth etching sidewall/surface control to minimize or even eliminate surface damage by low power & ALE technique. Leuven Instruments could provide an integrated plasma dry etching solutions to our customer in support various GaN technology development.