Modulation of p‐ and n‐Type Transitions in Co3−xNixO4Nanoparticles for Enhanced Supercapacitor Electrochemical Performance

Abstract The efficient storage of electrons and the type of conduction in semiconductor materials are important factors in determining their electrochemical performance. However, the interaction between these two factors is often overlooked by researchers. In this study, the effects of Ni doping at Co 3− x Ni x O 4 nanoparticles on the electronic storage form of the material and resulting changes in the conduction p/n‐type are reported. Theoretical calculations demonstrate that n‐type conduction with high effective mass of electrons contributes significantly to the redox reaction of electrode materials and is beneficial for improving electrochemical performance. The specific capacitance of Co 3− x Ni x O 4 ( x = 0.67) electrode material is 10 times larger than that of Co 3 O 4 due to enhanced orbital hybridization caused by Ni atom doping. The findings provide new directions for exploring the mechanism of conductive type conversion of materials and offer insights beyond the traditional approach of considering doping content alone.