光刻胶
化学
锌
抵抗
紫外线
光化学
轨道能级差
分辨率(逻辑)
胺气处理
带隙
分子
有机化学
光电子学
材料科学
人工智能
计算机科学
图层(电子)
作者
Rong Wu,Ming Luo,Lifei Liu,Lei Liu,Weizhen Zhao,Wen-Hua Sun
摘要
The fineness of the photolithographic pattern depends largely on the composition and structure of the photoresist, and different structures endow metal-based photoresists with different photon-absorbing capabilities. Here, we synthesized zinc-based photoresists with different electron-effect substituents (amine and bromine) in the ligands and investigated the influence of the ligand groups on the sensitivity and resolution at deep ultraviolet and electron beam. The developed resist patterns exhibit that the sensitivity of the Zn-based photoresists containing bromine groups (Zn-PBBA) is nearly seven times higher than the Zn-based photoresists containing amine groups (Zn-PABA) at the same resolution under ultraviolet irradiation, which is supported by the density functional theory (DFT) calculations where a smaller HOMO–LUMO gap for Zn-PBBA is obtained. Analogously, the Zn-PBBA also showed better sensitivity and resolution than Zn-PABA at EBL, with a resolution of 70 nm at a dose of 800 mJ cm−2 by characterization with AFM. This work provides an understanding of the efficient structural design of photoresists and future guidance for the development of better-performing materials.
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