半最大全宽
系统间交叉
电致发光
材料科学
量子效率
单重态
分子间力
共振(粒子物理)
有机发光二极管
光电子学
分子
纳米技术
物理
原子物理学
激发态
图层(电子)
量子力学
作者
Jue‐Yao Bai,Jun‐Yu Liu,Zhen Zhang,Yihui He,Guowei Chen,Yanchun Wang,Hao‐Ze Li,Feng‐Ming Xie,Jianxin Tang,Yanqing Li
出处
期刊:Small
[Wiley]
日期:2025-01-15
标识
DOI:10.1002/smll.202409328
摘要
Abstract Multiple resonance (MR)‐type thermally activated delayed fluorescence (TADF) emitters have garnered significant interest due to their narrow full width at half maximum (FWHM) and high electroluminescence efficiency. However, the planar structures and large singlet‐triplet energy gaps (Δ E ST s) characteristic of MR‐TADF molecules pose challenges to achieving high‐performance devices. Herein, two isomeric compounds, p ‐TPS‐BN and m ‐TPS‐BN , are synthesized differing in the connection modes between a bulky tetraphenylsilane (TPS) group and an MR core. This strategy aims to suppress intermolecular interactions, reduce Δ E ST values, and investigate how connection positions influence photoelectric properties. Both compounds exhibit remarkably small Δ E ST values (0.08–0.09 eV) and high internal quantum yields (95.0–97.8%). Notably, p ‐TPS‐BN demonstrates a faster reverse intersystem crossing (RISC) with a rate constant of 2.54 × 10⁵ s⁻¹, attributed to its optimal long‐range charge transfer (LRCT) process. A narrowband device employing p ‐TPS‐BN achieves a maximum external quantum efficiency of 35.8% with an FWHM of 36 nm. This work offers an effective framework for studying structure‐property relationships in MR molecules, paving the way for the development of high‐efficiency electroluminescent devices.
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