Novel Cyanoethyl Cellulose-based Bilayer Materials for Electrowetting Displays at Low Voltage

电润湿 材料科学 纤维素 双层 纳米技术 低压 电压 光电子学 化学工程 电气工程 遗传学 生物 工程类 电介质
作者
L. B. Chen,Hailing Sun,Jianyang Guo,Shuang Liu,Yuanyuan Guo,Guofu Zhou,Dong Yuan,Biao Tang,Jiawei Lai
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:17 (11): 17509-17520 被引量:2
标识
DOI:10.1021/acsami.4c21550
摘要

Electrowetting displays (EWD) still face the challenge of high driving voltages, provided by specialized driver ICs for electrowetting technologies. However, if the driving voltage is reduced to the threshold of widely used driver ICs of liquid crystal displays, it would significantly accelerate the revolution of driving ICs for EWD devices. Cyanoethyl cellulose (CEC) is utilized as a novel dielectric layer for electrowetting-on-dielectric systems and shows a large contact angle modulation, enabling low-voltage-driven wettability and device operation. Different combinations of bilayer Hyflon/CEC structures are systematically investigated to reduce the driving voltage. Reduction of driving voltage is revealed to be highly dependent on the enhancement of total capacitance Ceq through the link of effective dielectric constant εeff and a theoretical formula for reducing driving voltage is proposed. Furthermore, for the HF/CEC bilayer construction, values of Ceq largely depend on the thickness of the HF layer, while the variation in the thickness of the CEC layer has a smaller impact. Consequently, Vd can be reduced from 17, 14 to 9 V when decreasing the thickness of HF from 400, 300 to 200 nm with a CEC layer of 650 nm. Consequently, a low driving voltage of 9 V is successfully achieved for the CEC/Hyflon bilayer in the fabricated EWD, fulfilling the operating voltage for driving ICs of liquid crystal display. Therefore, capacitance values can be manipulated through tuning the thickness of CEC/Hyflon bilayers and provide a constructive strategy for designing dielectric and hydrophobic functional materials, ushering in a new era of EWD technology.
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