功率增加效率
放大器
射频功率放大器
宽带
阻抗匹配
电子工程
电感器
线性放大器
扼流圈
电气工程
电阻抗
工程类
电信
电压
CMOS芯片
作者
Jingyu Zhou,Jin Chen,Jianhua Huang,Xu Ding,Yinliang Xuan,Wei Chen,Zhiyu Wang,Hua Chen,Faxin Yu
出处
期刊:IEICE Electronics Express
[Institute of Electronics, Information and Communication Engineers]
日期:2024-07-22
卷期号:21 (17): 20240354-20240354
标识
DOI:10.1587/elex.21.20240354
摘要
This letter proposes a broadband high-efficiency quasi Class E internally matched power amplifier with a compact bandpass output matching structure. By setting all the harmonic impedances following the ideal Class E mode, a specific load-pull analysis is employed to achieve the optimum fundamental impedance region with both high power and high efficiency. In order to further improve the efficiency of the power amplifier, high-efficiency second harmonic impedance range is obtained by the similar load-pull analysis. A compact bandpass matching structure with only three inductors and two capacitors is utilized to realize a broadband output matching of the broadband Class E mode power amplifier. No additional choke inductor is needed for our design, which further reduces the size of the circuit. A compact broadband quasi Class E GaN power amplifier is designed and fabricated using an internal matching method. The drain efficiency of 71% to 76% is achieved at 1.3GHz to 2.0GHz, with an output power of 10W and a power gain of more than 11dB.
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