自旋电子学
Valleytronics公司
磁化
拓扑绝缘体
拓扑(电路)
凝聚态物理
铁磁性
物理
磁场
量子力学
数学
组合数学
作者
Runhan Li,Ning Mao,Xinming Wu,Baibiao Huang,Ying Dai,Chengwang Niu
出处
期刊:Nano Letters
[American Chemical Society]
日期:2022-11-03
卷期号:23 (1): 91-97
被引量:43
标识
DOI:10.1021/acs.nanolett.2c03680
摘要
Magnetic topological states have attracted great attention that provide exciting platforms for exploring prominent physical phenomena and applications of topological spintronics. Here, using a tight-binding model and first-principles calculations, we put forward that, in contrast to previously reported magnetic second-order topological insulators (SOTIs), robust SOTIs can emerge in two-dimensional ferromagnets regardless of magnetization directions. Remarkably, we identify intrinsic ferromagnetic 2H-RuCl2 and Janus VSSe monolayers as experimentally feasible candidates of predicted robust SOTIs with the emergence of nontrivial corner states along different magnetization directions. Moreover, under out-of-plane magnetization, we unexpectedly point out that the valley polarization of SOTIs can be huge and much larger than that of the known ferrovalley materials, opening up a technological avenue to bridge the valleytronics and higher-order topology with high possibility of innovative applications in topological spintronics and valleytronics.
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