鳍
材料科学
平面的
钝化
光电子学
表征(材料科学)
金属浇口
等离子体
逻辑门
电子工程
晶体管
栅氧化层
纳米技术
电气工程
计算机科学
工程类
图层(电子)
复合材料
电压
物理
计算机图形学(图像)
量子力学
作者
Xingyu Xiao,Yanliang Wang,Bo Su,Ke Xing,Shiliang Ji,Haiyang Zhang
出处
期刊:ECS transactions
[The Electrochemical Society]
日期:2022-05-20
卷期号:108 (5): 47-56
标识
DOI:10.1149/10805.0047ecst
摘要
3-Dimesional corner residue between Fin and gate bottom plays a key role in gate profile definition and device performance, while the characterization and compression remain challenging due to shortage of analysis technology and decreasing gate/Fin pitch. In this work, cross-section and planar TEM/STEM are adopted together to measure the real corner size. Gate profile loading along Fin is discussed based on the characterizations and further optimized by tuning processes. Several methods including sidewall passivation and ion bombardment modification has been introduced. An excellent FinFET performance is presented, together with a detailed mechanism.
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