An Insight Analysis of In0.7Ga0.3N Based pn Homo-Junction Solar Cell using SCAPS-1D Simulation Software

An insight analysis of In0.7Ga0.3N based pn homo-junction solar cell structure has been carried out using simulation software. A novel solar cell structure of n+ buffer contact layer/n window layer/p absorber layer/p+ back absorber layer has been proposed after device optimization. We have found that under the sun spectrum of AM 1.5 of 1 KW/m2 operating at 300 K, the solar cell with low series resistance of 3 Ω cm2, highly doped (1×1019 cm–3) n+ layer as buffer contact layer and p+ layer of 200 nm thick as back absorber layer on top of back metal contact, enable us to achieve an efficient solar cell. We found that doping concentration of $$1 \times {{10}^{{16}}}{\text{ c}}{{{\text{m}}}^{{ - 3}}}$$ in both active n and p layer, with 30 nm and 1.0 $${{\mu m}}$$ of thickness, respectively, would allow us to achieve short circuit current density of $$35{{{\text{ mA}}} \mathord{\left/ {\vphantom {{{\text{mA}}} {{\text{c}}{{{\text{m}}}^{2}}}}} \right. \kern-0em} {{\text{c}}{{{\text{m}}}^{2}}}}$$ , open circuit voltage of 1.0 V, overall efficiency of 28.32% and fill factor value of 80% from the solar cell. If we could further reduce the series resistance of In0.7Ga0.3N pn homo-junction solar cell to ideal one, it may allow us to have even higher overall efficiency and fill factor values of 31 and 86%, respectively.