灰度
光掩模
光刻胶
抵抗
材料科学
平版印刷术
人工智能
光学
计算机科学
光电子学
纳米技术
物理
像素
图层(电子)
作者
Christine Schuster,Marina Heinrich,Anja Voigt,Andy Zanzal,Patrick Reynolds,Stephen J. DeMoor,Gerda Ekindorf,Arne Schleunitz,G. Gruetzner
摘要
Greyscale lithography is applied to manufacture complex 2.5D and freeform microstructures in photoresists which serve as master for the pattern transfer into materials for permanent applications, often used in micro-optics. We present the results and the challenges in reproducible generation of deep greyscale patterns in a highly sensitive greyscale positive photoresist, mr-P 22G_XP, when using photomask-based mask aligner greyscale lithography in contrast to laser direct writing on which resist development had been focused. Furthermore, we show the influence of resist aging on the resist response, and ways to correct it by process adaption, as well as we conclude requirements to greyscale photomasks suitable to make use of the full potential of the mr-P 22G_XP resist dedicated for >100μm deep greyscale patterns.
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