4H-SiCδn-i-p Extreme Ultraviolet Detector With Gradient Doping-Induced Surface Junction

Extreme ultraviolet (EUV) detectors are key components required in many critical applications. In this work, a high-performance 4H-SiC $\delta \text{n}$ -i-p EUV detector with gradient doping-induced surface junction is designed and fabricated. The detector demonstrates ultra-low leakage current and excellent photo-response uniformity across the ~6 mm ² photo-sensitive area. Under photovoltaic operation mode, the detector exhibits high responsivity of 0.104 A/W and corresponding quantum efficiency of 960%@13.5 nm, which are close to the theoretical limit. Meanwhile, the equivalent noise power of the device under 0 V bias is determined to be $2.35\times {10}^{\text {-12}}$ W by 1/f noise test, proving that the device has a very low noise level and corresponding high detectivity. In addition, the high-temperature working capability and radiation-resistant performance of the EUV detector are preliminarily verified.