MNM-P11-2 Modeling of VB-FET Taking into Account Electro-Mechanical Interaction Between Gate and Channel

In this study, we evaluated properties of Vibrating-Body Field Effect Transistor (VB-FET), which integrated MOSFET into MEMS oscillator, taking into account electro-mechanical interaction between gate and channel. Our modeling was started to express VB-FET as an equivalent circuit. And we calculated Lagrange's function and dissipation function from the equivalent circuit. We calculated a transconductance and a output resistance of VB-FET. Consequently, the value of the transconductance peaked at resonance frequency and be increased up to 11 times. Then the output resistance of VB-FET is reduced to 18Ω. And we confirmed that resonance frequency changes due to gate voltage. In this way, we demonstrated properties of VB-FET.