Integration of picosecond GaAs photoconductive devices with silicon circuits for optical clocking and interconnects

GaAs layers have been grown on silicon subsirates by Molecular Beam Epitaxy (MBE), from which photoconductive circuit elements (PCE) have been fabricated. A fabrication procedure will be described which is fully compatible with standard siicdn IC processing technology. Results will be presented demonstrating the reliance of GaAs PCE performance on epitaxial growth conditions and subsequent processing steps. PCE response speeds ranging from <10 to 60 P5 have been observed.