Instrumented wafer as a Langmuir multiprobe tool for lateral plasma homogeneity measurements in processing plasma reactors

The multiprobe Langmuir measurement on-wafer tool for microelectronics ICP reactors was developed. It allows measurements of electron temperature, ion concentration, plasma potential and floating potential directly on chuck. Homogeneity of He and Ar plasmas (electron temperature and negative ion concentration) were measured, and causes of different distribution patterns were discussed.