On the emission states in MQWs of InGaN/GaN and AIGaN based SQW

The control of emission characteristics is of great importance as more specific wavelengths for applications are in demand with respect to nitride materials. Detailed investigations have been carried out to understand the emission states in multi quantum wells (MQWs) of Indium Gallium Nitride and Single Quantum well Aluminum Gallium Nitride structures using structural and optical investigations. The effect of growth parameters including the well thickness and the composition has been investigated and will be presented in detail.