SMALL-AREA HIGH-CURRENT-DENSITY GaAs ELECTROLUMINESCENT DIODES AND A METHOD OF OPERATION FOR IMPROVED DEGRADATION CHARACTERISTICS
作者
C.A. Burrus,R.W. Dawson
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:1970-08-01卷期号:17 (3): 97-99被引量:57
标识
DOI:10.1063/1.1653336
摘要
Diffused-junction GaAs electroluminescent diodes of small area and high radiance have been fabricated. It has been observed (1) that the degradation of these high-current-density cw diodes can be reduced greatly by superimposing a periodic reverse-bias pulse on the normal dc forward bias, and (2) that a previously degraded diode is restored to its initial light output by the influence of the built-in junction fields, or an applied dc reverse bias, at an elevated temperature.