光电探测器
光电子学
暗电流
材料科学
紫外线
红外线的
砷化铟
硅
半导体
砷化镓
光学
物理
作者
Xiong Gong,Meiping Tong,Yangjun Xia,Wanzhu Cai,Ji Sun Moon,Yong Cao,Gang Yu,C.L. Shieh,Boo Nilsson,Alan J. Heeger
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2009-09-25
卷期号:325 (5948): 1665-1667
被引量:1598
标识
DOI:10.1126/science.1176706
摘要
Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Today, gallium nitride-, silicon-, and indium gallium arsenide--based detectors are used for different sub-bands within the ultraviolet to near-infrared wavelength range. We demonstrate polymer photodetectors with broad spectral response (300 to 1450 nanometers) fabricated by using a small-band-gap semiconducting polymer blended with a fullerene derivative. Operating at room temperature, the polymer photodetectors exhibit detectivities greater than 10(12) cm Hz(1/2)/W and a linear dynamic range over 100 decibels. The self-assembled nanomorphology and device architecture result in high photodetectivity over this wide spectral range and reduce the dark current (and noise) to values well below dark currents obtained in narrow-band photodetectors made with inorganic semiconductors.
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