硅
硼
退火(玻璃)
离子注入
二次离子质谱法
材料科学
分析化学(期刊)
扩散
扩展阻力剖面
MOSFET
二次离子质谱
博罗
离子
分子物理学
光电子学
化学
冶金
晶体管
热力学
电气工程
物理
有机化学
色谱法
电压
工程类
作者
Jay F. Marchiando,P. Roitman,John Albers
标识
DOI:10.1109/t-ed.1985.22278
摘要
Well-defined control of high-and low-temperature anneals of boron implanted in silicon is important in the calculation of shallow p-n junction profiles used in MOSFET's. Here, a sample matrix of boron implanted into silicon over a range of fluences and annealing temperatures is considered. The matrix of samples was measured by SIMS (secondary ion mass spectrometry). The measured profiles were compared with simulations from an annealing/diffusion model. Calculations of the annealed profiles were found to be in agreement with the SIMS data at temperatures greater than 1000°C. At lower temperatures, the profiles exhibit effects due to implantation damage which are not included in the diffusion model.
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