High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

In this work, based on the selective-area p-type doping of GaN via Mg-ion implantation, quasi-vertical GaN junction-barrier-Schottky (JBS) diode on sapphire substrate was demonstrated. By combining the benefits of PN diodes and SBDs, the JBS diode achieved a high voltage and current rating of 830 V/60 A, as well as zero-reverse recovery characteristics. Additionally, the continuously repetitive breakdown in the UIS tests and positive temperature coefficient of the breakdown voltage further revealed the rugged avalanche capability of these diodes, showing their great potential in low-cost, fast-switching and highly-reliable power electronics applications.