石墨烯
异质结
辐照
材料科学
堆积
分子动力学
离子
离子束
基质(水族馆)
光电子学
纳米技术
化学
物理
核磁共振
计算化学
地质学
海洋学
有机化学
核物理学
标识
DOI:10.1038/s41598-021-00582-2
摘要
Abstract The interaction between ion irradiation and two-dimensional (2D) heterostructures is important for the performance modulation and application realization, while few studies have been reported. This paper investigates the influence of Ar ion irradiation on graphene/MoS 2 heterostructure by using molecular dynamics (MD) simulations. The generation of defects is studied at first by considering the influence factors (i.e., irradiation energy, dose, stacking order, and substrate). Then uniaxial tensile test simulations are conducted to uncover the evolution of the mechanical performance of graphene/MoS 2 heterostructure after being irradiated by ions. At last, the control rule of interlayer distance in graphene/MoS 2 heterostructure by ion irradiation is illustrated for the actual applications. This study could provide important guidance for future application in tuning the performance of graphene/MoS 2 heterostructure-based devices by ion beam irradiation.
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