A Test Chip for Characterization of the Series Association of MOSFETs

This brief describes a compact test chip in a 130-nm CMOS technology, aimed at characterizing both the short- and long-channel transistors and the series association of halo-implanted transistors. The chip contains a set of low-threshold-voltage (LVT) nMOS/pMOS transistors with several channel lengths and transistors associated in series. Parameters, such as threshold voltage, specific current, and intrinsic voltage gain, were determined through simulation and measurements of 20 chips. The results reported herein provide integrated circuit designers with guidelines for choosing either long-channel lengths or series association of transistors to comply with the requirements of their design.