离解(化学)
催化作用
密度泛函理论
化学
铂金
化学工程
各向同性腐蚀
水解
蚀刻(微加工)
化学键
化学反应
物理化学
计算化学
碳化硅
屏障激活
动力学
化学物理
光化学
有机化学
工程类
物理
图层(电子)
量子力学
作者
Pho Van Bui,Daisetsu Toh,Ai Isohashi,Satoshi Matsuyama,Kouji Inagaki,Yasuhisa Sano,Kazuto Yamauchi,Yoshitada Morikawa
标识
DOI:10.7567/jjap.57.055703
摘要
Abstract A comprehensive study of the physicochemical interactions and the reaction mechanism of SiC etching with water by Pt catalysts can reveal key details about the surface treatment and catalytic phenomena at interfaces. Therefore, density functional theory simulations were performed to study the kinetics of Pt-assisted water dissociation and breaking of a Si–C bond compared to the HF-assisted mechanism. These calculations carefully considered the elastic and chemical interaction energies at the Pt–SiC interface, activation barriers of Si–C bond dissociation, and the catalytic role of Pt. It was found that the Pt-catalyzed etching of SiC in water is initiated via hydrolysis reactions that break the topmost Si–C bonds. The activation barrier strongly depends on the elastic and chemical interactions. However, chemical interactions are a dominant factor and mainly contribute to the lowering of the activation barrier, resulting in an increased rate of reaction.
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