单晶硅
硅
材料科学
共发射极
晶体硅
太阳能电池
载流子寿命
光电子学
量子点太阳电池
兴奋剂
量子效率
作者
Jan Benick,Armin Richter,Ralph Müller,Hubert Hauser,Frank Feldmann,Patricia Krenckel,Stephan Riepe,Florian Schindler,Martin C. Schubert,Martin Hermle,Andreas W. Bett,Stefan W. Glunz
标识
DOI:10.1109/jphotov.2017.2714139
摘要
Silicon solar cells featuring the highest conversion efficiencies are made from monocrystalline n-type silicon. The superior crystal quality of high-performance multicrystalline silicon (HP mc) in combination with the inherent benefits of n-type doping (higher tolerance to common impurities) should allow the fabrication of high-efficiency solar cells also on mc silicon. In this paper, we address high-efficiency n-type HP mc solar cells with diffused boron front emitter and full-area passivating rear contact (TOPCon). n-type HP mc silicon was crystallized at Fraunhofer ISE featuring a very high average lifetime in the range of 600 μs (i.e., diffusion length >800 μm) after application of all high-temperature steps necessary for cell fabrication. Using a “black silicon” front texture we have achieved a weighted reflectance of ~1% and simultaneously a very good electrical performance, i.e., J 0e values of ≤ 60 fA/cm 2 for a 90 Ω/sq emitter. The resulting n-type mc silicon solar cells show certified conversion efficiencies up to 21.9%, representing the current world record for mc silicon solar cells.
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