光探测
材料科学
光电探测器
响应度
光电子学
异质结
石墨烯
量子效率
红外线的
紫外线
比探测率
光子学
太赫兹辐射
范德瓦尔斯力
极化(电化学)
灵敏度(控制系统)
电场
半导体
光学
多光谱图像
等离子体子
载流子
作者
Waqas Ahmad,Umer Younis,Muhammad Zubair Nawaz,Vijay Laxmi,Jinying Zhang,Wen Lei,Qiandong Zhuang,Zhiming Wang,Yury Yuryevich Illarionov
标识
DOI:10.1021/acsami.6c03721
摘要
Efficient photocarrier separation and collection are essential for high-performance photodetectors. In van der Waals (vdWs) heterostructures, carefully engineering the interfaces and built-in electric fields is an effective strategy to maximize device performance. Here, we present a high-performance photodetector based on a vertically stacked few-layer graphene/violet phosphorus/MoS 2 (FLG/VP/MoS 2 ) vdWs heterostructure, which exhibits significantly enhanced performance across a broad spectral range from ultraviolet (275 nm) to near Infrared (808 nm). The photodetector achieves a responsivity of up to 8.8 × 10 4 A/W with an external quantum efficiency of 1.81 × 10 7 ─values over 5 orders of magnitude higher than those of a bare VP/MoS 2 device (∼0.52 A/W and 7.68%, respectively). It also exhibits a fast photoresponse (rise time of ∼1.5 ms) and notable polarization sensitivity (dichroic ratio of ∼1.075). Moreover, the device maintains stable performance of over at least 100 on–off cycles, highlighting its excellent operational durability. First-principles calculations further corroborate the strong interlayer coupling and structural stability of the device interface, providing theoretical support for the observed durability and photodetection mechanism. Collectively, this work positions the FLG/VP/MoS 2 vdWs heterostructure as a promising platform for high-performance, broadband, and polarization-sensitive photodetection in advanced optoelectronic applications.
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