密度泛函理论
激子
分子内力
有机太阳能电池
带隙
接受者
分子
离解(化学)
材料科学
能量转换效率
太阳能电池
化学物理
吸收(声学)
光电子学
电荷(物理)
化学
光伏系统
含时密度泛函理论
吸收光谱法
电子
计算化学
光化学
聚合物太阳能电池
分子物理学
功能群
电子供体
电子受体
载流子
电子能带结构
电子迁移率
混合功能
吸收带
小分子
结合能
衍生工具(金融)
混合太阳能电池
电子转移
太阳能
有效核电荷
作者
Pankaj Kumar Kushwaha,Sunil Kumar Srivastava
摘要
ABSTRACT This study presents the design and analysis of five acceptor–donor–acceptor (A–D–A) type donor molecules ( QABT1 – QABT5 ) by incorporating 2,1,3‐benzothiadiazole (BT) derivatives as electron‐withdrawing acceptor groups into a synthesized reference molecule ( R ) for organic solar cell (OSC) applications. Density functional theory (DFT) and time‐dependent DFT (TD‐DFT) methods were employed to explore the impact of acceptor modifications on the structural, electronic, optical, charge transport, and photovoltaic properties of the designed molecules. The results indicate that introducing strong electron‐withdrawing groups significantly enhances overall device performance. The structural modifications lead to reduced HOMO–LUMO band gaps (2.02–2.36 eV), facilitating efficient charge transfer (CT) and extending the absorption spectra. All designed molecules exhibit broader and red‐shifted absorption in both gaseous and solvent phases, along with lower optical band gaps and reduced exciton binding energies, improving exciton dissociation and charge transport efficiency compared to the reference molecule. Among the designed molecules, QABT4 and QABT5 emerge as the most promising candidates, exhibiting a small optical band gap (1.75 eV), extended excited‐state lifetime (9.65 ns), and low reorganization energies for electrons ( λ e ∼97 meV) and holes ( λ ℎ ∼120 meV). Additionally, the strong push‐pull mechanism results in efficient intramolecular CT, with above 85% CT excitations. These properties contribute to an enhanced short‐circuit current density (J sc ∼13.73 mA/cm 2 ), high open‐circuit voltage (V oc ∼1.46 V) with minimal energy loss (0.57 eV), and a theoretical power conversion efficiency (PCE) up to ∼18%. These findings underscore QABT4 and QABT5 as promising candidates for high‐performance OSCs, paving the way for next‐generation optoelectronic applications.
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